PSMN027-100PS,127
  • Share:

Nexperia USA Inc. PSMN027-100PS,127

Manufacturer No:
PSMN027-100PS,127
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
PSMN027-100PS,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 37A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1624 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):103W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.66
360

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN027-100PS,127 PSMN027-100XS,127  
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 23.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 26.8mOhm @ 15A, 10V 26.8mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1624 pF @ 50 V 1624 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 103W (Tc) 41.1W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220F
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab

Related Product By Categories

C2M0080120D
C2M0080120D
Wolfspeed, Inc.
SICFET N-CH 1200V 36A TO247-3
BSP296L6433
BSP296L6433
Infineon Technologies
SMALL-SIGNAL N-CHANNEL MOSFET
IPU60R600C6BKMA1
IPU60R600C6BKMA1
Infineon Technologies
MOSFET N-CH 600V 7.3A TO251-3
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
IRFP3006PBF
IRFP3006PBF
Infineon Technologies
MOSFET N-CH 60V 195A TO247AC
VN2460N3-G
VN2460N3-G
Microchip Technology
MOSFET N-CH 600V 160MA TO92-3
RJK5012DPP-00#T2
RJK5012DPP-00#T2
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
P3M06120T3
P3M06120T3
PN Junction Semiconductor
SICFET N-CH 650V 29A TO-220-3
NTF2955PT1G
NTF2955PT1G
onsemi
MOSFET P-CH 60V 1.7A SOT-223
IXFR30N50Q
IXFR30N50Q
IXYS
MOSFET N-CH 500V 30A ISOPLUS247
SI4384DY-T1-GE3
SI4384DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 10A 8SO
R6509ENJTL
R6509ENJTL
Rohm Semiconductor
MOSFET N-CH 650V 9A LPTS

Related Product By Brand

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL
Nexperia USA Inc.
TVS DIODE 2VWM 3VC DSN0603-2
PESD12VSA-LYL
PESD12VSA-LYL
Nexperia USA Inc.
PESD12VSA-L - ESD PROTECTION DIO
PTVS30VP1UTP,115
PTVS30VP1UTP,115
Nexperia USA Inc.
TVS DIODE 30VWM 48.4VC CFP5
PDZ27BGWJ
PDZ27BGWJ
Nexperia USA Inc.
DIODE ZENER 27V 365MW SOD123
PDTD113ZUF
PDTD113ZUF
Nexperia USA Inc.
TRANS PREBIAS NPN 0.425W
PMPB215ENEA/F,115
PMPB215ENEA/F,115
Nexperia USA Inc.
80V, SINGLE N CHANNEL TRENCH MOS
74HC365D
74HC365D
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74LVCH245ADB,112
74LVCH245ADB,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SSOP
74ALVC08PW,118
74ALVC08PW,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14TSSOP
74AHC1G09GW-Q100H
74AHC1G09GW-Q100H
Nexperia USA Inc.
IC GATE AND OD 1CH 2-INP 5TSSOP
74LV4094PW,118
74LV4094PW,118
Nexperia USA Inc.
IC 8BIT SHIFT/STORE BUS 16TSSOP
74HC597PW-Q100J
74HC597PW-Q100J
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16TSSOP