PSMN016-100PS,127
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Nexperia USA Inc. PSMN016-100PS,127

Manufacturer No:
PSMN016-100PS,127
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
PSMN016-100PS,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 57A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:57A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2404 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):148W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number PSMN016-100PS,127 PSMN016-100XS,127   PSMN013-100PS,127  
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 57A (Tj) 32.1A (Tc) 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 15A, 10V 16mOhm @ 10A, 10V 13.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 46.2 nC @ 10 V 59 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2404 pF @ 50 V 2404 pF @ 50 V 3195 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 148W (Tc) 46.1W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220F TO-220AB
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3

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