PSMN013-100ES,127
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Nexperia USA Inc. PSMN013-100ES,127

Manufacturer No:
PSMN013-100ES,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Datasheet:
PSMN013-100ES,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 68A I2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3195 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number PSMN013-100ES,127 PSMN013-100PS,127   PSMN013-100XS,127  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc) 68A (Tc) 35.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 15A, 10V 13.9mOhm @ 15A, 10V 13.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 59 nC @ 10 V 57.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3195 pF @ 50 V 3195 pF @ 50 V 3195 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 170W (Tc) 170W (Tc) 48.4W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I2PAK TO-220AB TO-220F
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-220-3 Full Pack, Isolated Tab

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