PSMN011-60MLX
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Nexperia USA Inc. PSMN011-60MLX

Manufacturer No:
PSMN011-60MLX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN011-60MLX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 61A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.45V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:37.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2191 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number PSMN011-60MLX PSMN011-60MSX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 11.3mOhm @ 15A, 10V 11.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37.2 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2191 pF @ 30 V 1368 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 91W (Tc) 91W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

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