Nexperia USA Inc.-PSMN006-20K,518 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	5mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:	700mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:	32 nC @ 2.5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	4350 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	8.3W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

Nexperia USA Inc. PSMN006-20K,518