PMZB550UNEYL
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Nexperia USA Inc. PMZB550UNEYL

Manufacturer No:
PMZB550UNEYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMZB550UNEYL Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 590MA DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:590mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:670mOhm @ 590mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:30.3 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
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Similar Products

Part Number PMZB550UNEYL PMZ550UNEYL   PMZB150UNEYL  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 590mA (Ta) 590mA (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 670mOhm @ 590mA, 4.5V 670mOhm @ 590mA, 4.5V 200mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.5 V 1.1 nC @ 4.5 V 1.6 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 30.3 pF @ 15 V 30.3 pF @ 15 V 93 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc) 310mW (Ta), 1.67W (Tc) 350mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 SOT-883 DFN1006B-3
Package / Case 3-XFDFN SC-101, SOT-883 3-XFDFN

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