PMZB350UPE,315
  • Share:

Nexperia USA Inc. PMZB350UPE,315

Manufacturer No:
PMZB350UPE,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMZB350UPE,315 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 1A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:450mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.9 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:127 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 3.125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.51
27

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMZB350UPE,315 PMZB320UPE,315  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs 450mOhm @ 300mA, 4.5V -
Vgs(th) (Max) @ Id 950mV @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 4.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 127 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 3.125W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package DFN1006B-3 -
Package / Case 3-XFDFN -

Related Product By Categories

AON6144
AON6144
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 40V 100A 8DFN
TP65H050WS
TP65H050WS
Transphorm
GANFET N-CH 650V 34A TO247-3
NVMFS5C670NLWFAFT1G
NVMFS5C670NLWFAFT1G
onsemi
MOSFET N-CH 60V 17A/71A 5DFN
IRF1010ZSTRLPBF
IRF1010ZSTRLPBF
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
IXFH42N60P3
IXFH42N60P3
IXYS
MOSFET N-CH 600V 42A TO247AD
AOTF11S60L
AOTF11S60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 11A TO220-3F
IRF1404L
IRF1404L
Infineon Technologies
MOSFET N-CH 40V 162A TO262
IRF7450PBF
IRF7450PBF
Infineon Technologies
MOSFET N-CH 200V 2.5A 8SO
2SK326800L
2SK326800L
Panasonic Electronic Components
MOSFET N-CH 100V 15A U-DL
BSC052N03S G
BSC052N03S G
Infineon Technologies
MOSFET N-CH 30V 18A/80A TDSON
BSS225L6327HTSA1
BSS225L6327HTSA1
Infineon Technologies
MOSFET N-CH 600V 90MA SOT89
PJD1NA60A_R2_00001
PJD1NA60A_R2_00001
Panjit International Inc.
600V N-CHANNEL MOSFET

Related Product By Brand

PMEG120G20ELR-QX
PMEG120G20ELR-QX
Nexperia USA Inc.
SIGE RECTIFIERS IN CFP PACKAGES
BZV85-C7V5,133
BZV85-C7V5,133
Nexperia USA Inc.
BZV85 SERIES - VOLTAGE REGULATOR
PDZ11BGWJ
PDZ11BGWJ
Nexperia USA Inc.
DIODE ZENER 11V 365MW SOD123
BCX55TF
BCX55TF
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BC846B/DG/B3,235
BC846B/DG/B3,235
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
PMPB29XPEAX
PMPB29XPEAX
Nexperia USA Inc.
MOSFET P-CH 20V 5A DFN2020MD-6
74ALVCH162244DGG:1
74ALVCH162244DGG:1
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 48TSSOP
74LVC16241ADGG,112
74LVC16241ADGG,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 48TSSOP
74VHC14D,118
74VHC14D,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
74HC20PW-Q100,118
74HC20PW-Q100,118
Nexperia USA Inc.
IC GATE NAND 2CH 4-INP 14TSSOP
NXB0104PWJ
NXB0104PWJ
Nexperia USA Inc.
IC TXRX TRANSLATING 14TSSOP
TLVH431NAIDBZRR
TLVH431NAIDBZRR
Nexperia USA Inc.
IC VREF SHUNT ADJ 1.5% TO236AB