PMZB350UPE,315
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Nexperia USA Inc. PMZB350UPE,315

Manufacturer No:
PMZB350UPE,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMZB350UPE,315 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 1A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:450mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.9 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:127 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 3.125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
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Similar Products

Part Number PMZB350UPE,315 PMZB320UPE,315  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs 450mOhm @ 300mA, 4.5V -
Vgs(th) (Max) @ Id 950mV @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 4.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 127 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 3.125W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package DFN1006B-3 -
Package / Case 3-XFDFN -

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