PMZ370UNEYL
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Nexperia USA Inc. PMZ370UNEYL

Manufacturer No:
PMZ370UNEYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMZ370UNEYL Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 900MA DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:490mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.16 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:78 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
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Similar Products

Part Number PMZ370UNEYL PMZ390UNEYL  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 900mA (Ta) 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 490mOhm @ 500mA, 4.5V 470mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.16 nC @ 4.5 V 1.3 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 78 pF @ 25 V 41 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 350mW (Ta), 5.43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-883 SOT-883
Package / Case SC-101, SOT-883 SC-101, SOT-883

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