PMZ1200UPEYL
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Nexperia USA Inc. PMZ1200UPEYL

Manufacturer No:
PMZ1200UPEYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMZ1200UPEYL Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 410MA DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.2 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:43.2 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
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Similar Products

Part Number PMZ1200UPEYL PMZB1200UPEYL  
Manufacturer Nexperia USA Inc. NXP Semiconductors
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 410mA (Ta) 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 410mA, 4.5V 1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 4.5 V 1.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 43.2 pF @ 15 V 43.2 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc) 310mW (Ta), 1.67W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-883 DFN1006B-3
Package / Case SC-101, SOT-883 3-XFDFN

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