PMXB65UPEZ
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Nexperia USA Inc. PMXB65UPEZ

Manufacturer No:
PMXB65UPEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMXB65UPEZ Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 3.2A DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:634 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):317mW (Ta), 8.33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010D-3
Package / Case:3-XDFN Exposed Pad
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Similar Products

Part Number PMXB65UPEZ PMXB75UPEZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 72mOhm @ 3.2A, 4.5V 85mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 634 pF @ 6 V 608 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 317mW (Ta), 8.33W (Tc) 317mW (Ta), 8.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1010D-3 DFN1010D-3
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad

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