Nexperia USA Inc.-PMXB360ENEAZ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id:	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	130 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	400mW (Ta), 6.25W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN1010D-3
Package / Case:	3-XDFN Exposed Pad

Nexperia USA Inc. PMXB360ENEAZ