Nexperia USA Inc.-PMXB120EPEZ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	120mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	11 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	309 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	400mW (Ta), 8.3W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN1010D-3
Package / Case:	3-XDFN Exposed Pad

Nexperia USA Inc. PMXB120EPEZ