PMV65XPER
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Nexperia USA Inc. PMV65XPER

Manufacturer No:
PMV65XPER
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV65XPER Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 2.8A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:618 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV65XPER PMV65XPEAR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 78mOhm @ 2.8A, 4.5V 78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 9 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 618 pF @ 10 V 618 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta), 6.25W (Tc) 480mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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