PMV65XP,215
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Nexperia USA Inc. PMV65XP,215

Manufacturer No:
PMV65XP,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV65XP,215 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 2.8A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:744 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV65XP,215 PMV65XP1215   PMV65XPE215  
Manufacturer Nexperia USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
FET Type P-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 20 V - -
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) - -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V - -
Rds On (Max) @ Id, Vgs 74mOhm @ 2.8A, 4.5V - -
Vgs(th) (Max) @ Id 900mV @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V - -
Vgs (Max) ±12V - -
Input Capacitance (Ciss) (Max) @ Vds 744 pF @ 20 V - -
FET Feature - - -
Power Dissipation (Max) 480mW (Ta) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount - -
Supplier Device Package TO-236AB - -
Package / Case TO-236-3, SC-59, SOT-23-3 - -

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