PMV50ENEAR
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Nexperia USA Inc. PMV50ENEAR

Manufacturer No:
PMV50ENEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV50ENEAR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 3.9A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:43mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:276 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 3.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV50ENEAR PMV50XNEAR   PMV50EPEAR   PMV52ENEAR   PMV60ENEAR   PMV55ENEAR   PMV30ENEAR   PMV450ENEAR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 40 V 60 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta) 3.4A (Ta) 4.2A (Ta) 3.2A (Ta) 3A (Ta) 3.1A (Ta) 4.8A (Ta) 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 8V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 43mOhm @ 3.9A, 10V 57mOhm @ 3.4A, 8V 45mOhm @ 4.2A, 10V 70mOhm @ 3.2A, 10V 75mOhm @ 3A, 10V 60mOhm @ 3.1A, 10V 30mOhm @ 4.8A, 10V 380mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1.25V @ 250µA 3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.7V @ 250µA 2.5V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 5 nC @ 4.5 V 19.2 nC @ 10 V 3.3 nC @ 10 V 5 nC @ 10 V 19 nC @ 10 V 11.7 nC @ 10 V 3.6 nC @ 10 V
Vgs (Max) ±20V ±12V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 276 pF @ 15 V 296 pF @ 15 V 793 pF @ 15 V 100 pF @ 15 V 180 pF @ 20 V 646 pF @ 30 V 440 pF @ 20 V 101 pF @ 30 V
FET Feature - - - - - - - -
Power Dissipation (Max) 510mW (Ta), 3.9W (Tc) 590mW (Ta), 5.6W (Tc) 310mW (Ta), 455mW (Tc) 630mW (Ta), 5.7W (Tc) 615mW (Ta), 7.5W (Tc) 478mW (Ta), 8.36W (Tc) 710mW (Ta), 8.3W (Tc) 323mW (Ta), 554mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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