PMV48XP,215
  • Share:

Nexperia USA Inc. PMV48XP,215

Manufacturer No:
PMV48XP,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV48XP,215 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 3.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.52
1,186

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMV48XP,215 PMV48XPA215  
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 55mOhm @ 2.4A, 4.5V -
Vgs(th) (Max) @ Id 1.25V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 510mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package TO-236AB -
Package / Case TO-236-3, SC-59, SOT-23-3 -

Related Product By Categories

HUF75631S3S
HUF75631S3S
Fairchild Semiconductor
N CHANNEL ULTRAFET 100V, 33A, 4
HAT2085T-EL-E
HAT2085T-EL-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
AO3435
AO3435
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 2.9A SOT23-3L
IPP120P04P4L03AKSA1
IPP120P04P4L03AKSA1
Infineon Technologies
MOSFET P-CH 40V 120A TO220-3
SQS142ENW-T1_GE3
SQS142ENW-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 40 V (D-S)
IPW65R099CFD7AXKSA1
IPW65R099CFD7AXKSA1
Infineon Technologies
MOSFET N-CH 650V 24A TO247-3-41
NVMYS2D9N04CLTWG
NVMYS2D9N04CLTWG
onsemi
MOSFET N-CH 40V 27A/110A LFPAK4
ZXM64N03XTA
ZXM64N03XTA
Diodes Incorporated
MOSFET N-CH 30V 5A 8MSOP
MTB50P03HDLG
MTB50P03HDLG
onsemi
MOSFET P-CH 30V 50A D2PAK
RJK03C1DPB-00#J5
RJK03C1DPB-00#J5
Renesas Electronics America Inc
MOSFET N-CH 30V 60A LFPAK
IPP12CN10NGXKSA1
IPP12CN10NGXKSA1
Infineon Technologies
MOSFET N-CH 100V 67A TO220-3
AO4449_DELTA
AO4449_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 7A 8SOIC

Related Product By Brand

PMEG4010CEGWJ
PMEG4010CEGWJ
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD123
BZX884S-C24-QYL
BZX884S-C24-QYL
Nexperia USA Inc.
BZX884S-C24-Q/SOD882BD/XSON2
BZX384-B5V1,115
BZX384-B5V1,115
Nexperia USA Inc.
DIODE ZENER 5.1V 300MW SOD323
BZX84J-C10,115
BZX84J-C10,115
Nexperia USA Inc.
DIODE ZENER 10V 550MW SOD323F
BZV49-C11,115
BZV49-C11,115
Nexperia USA Inc.
DIODE ZENER 11V 1W SOT89
PDTA124EMB,315
PDTA124EMB,315
Nexperia USA Inc.
NEXPERIA PDTA124EMB - SMALL SIGN
CBTD3306GT,115
CBTD3306GT,115
Nexperia USA Inc.
NEXPERIA CBTD3306GT - BUS DRIVER
74HC7540D,118
74HC7540D,118
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SO
74AUP1G0832GS,132
74AUP1G0832GS,132
Nexperia USA Inc.
IC GATE AND/OR 3-IN 6X2SON
74LV1T04GWH
74LV1T04GWH
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74AHC1G32GW-Q100,1
74AHC1G32GW-Q100,1
Nexperia USA Inc.
IC GATE OR 1CH 2-INP 5TSSOP
74AHC1G14GV-Q100,1
74AHC1G14GV-Q100,1
Nexperia USA Inc.
IC INVERT SCHMITT 1CH 1-IN SC74A