PMV48XP,215
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Nexperia USA Inc. PMV48XP,215

Manufacturer No:
PMV48XP,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV48XP,215 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 3.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV48XP,215 PMV48XPA215  
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 55mOhm @ 2.4A, 4.5V -
Vgs(th) (Max) @ Id 1.25V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 510mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package TO-236AB -
Package / Case TO-236-3, SC-59, SOT-23-3 -

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