PMV280ENEAR
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Nexperia USA Inc. PMV280ENEAR

Manufacturer No:
PMV280ENEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV280ENEAR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 1.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:385mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):580mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV280ENEAR PMV28ENEAR   PMV230ENEAR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 30 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) 4.4A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 385mOhm @ 1.1A, 10V 37mOhm @ 4.4A, 10V 222mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V 8 nC @ 10 V 4.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 50 V 266 pF @ 15 V 177 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 580mW (Ta) 660mW (Ta), 8.3W (Tc) 480mW (Ta), 1.45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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