Nexperia USA Inc.-PMV213SN,215 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	250mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	7 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	330 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	280mW (Tj)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-236AB
Package / Case:	TO-236-3, SC-59, SOT-23-3

Nexperia USA Inc. PMV213SN,215