PMV164ENER
  • Share:

Nexperia USA Inc. PMV164ENER

Manufacturer No:
PMV164ENER
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV164ENER Datasheet
ECAD Model:
-
Description:
PMV164ENE/SOT23/TO-236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:218mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):640mW (Ta), 5.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
923

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMV164ENER PMV164ENEAR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 218mOhm @ 1.6A, 10V 218mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V 3.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 30 V 110 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 640mW (Ta), 5.8W (Tc) 640mW (Ta), 5.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STF6N52K3
STF6N52K3
STMicroelectronics
MOSFET N-CH 525V 5A TO220FP
SISS27DN-T1-GE3
SISS27DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 50A PPAK 1212-8S
TSM4NB60CH C5G
TSM4NB60CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 4A TO251
SI7454FDP-T1-RE3
SI7454FDP-T1-RE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET POW
IAUC80N04S6N036ATMA1
IAUC80N04S6N036ATMA1
Infineon Technologies
IAUC80N04S6N036ATMA1
RJK0853DPB-00#J5
RJK0853DPB-00#J5
Renesas Electronics America Inc
MOSFET N-CH 80V 40A LFPAK
DMPH6250SQ-7
DMPH6250SQ-7
Diodes Incorporated
MOSFET P-CH 60V 2.4A SOT23 T&R
SIHD3N50D-E3
SIHD3N50D-E3
Vishay Siliconix
MOSFET N-CH 500V 3A DPAK
IRF6218SPBF
IRF6218SPBF
Infineon Technologies
MOSFET P-CH 150V 27A D2PAK
SI7440DP-T1-GE3
SI7440DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A PPAK SO-8
STF18NM60ND
STF18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
AON7405_001
AON7405_001
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 25A/50A 8DFN

Related Product By Brand

PTVS20VP1UP,115
PTVS20VP1UP,115
Nexperia USA Inc.
TVS DIODE 20VWM 32.4VC CFP5
PMEG60T10ELXDX
PMEG60T10ELXDX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES PMEG60
RB520CS30L,315
RB520CS30L,315
Nexperia USA Inc.
DIODE SCHOTTKY 30V 100MA SOD882
BCM857QASZ
BCM857QASZ
Nexperia USA Inc.
TRANS 2PNP 45V 0.1A DFN1010B-6
PDTA124EQAZ
PDTA124EQAZ
Nexperia USA Inc.
TRANS PREBIAS PNP 50V DFN1010D-3
PDI1284P11DGG,112
PDI1284P11DGG,112
Nexperia USA Inc.
IC INTERFACE SPECIALIZED 48TSSOP
74AHC245PW,112
74AHC245PW,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20TSSOP
74HC3G34DC,125
74HC3G34DC,125
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 8VSSOP
74AUP2G0604GFH
74AUP2G0604GFH
Nexperia USA Inc.
IC INVERTER OD 2CH 2-INP 6XSON
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC594AD,118
74LVC594AD,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16-SOIC
NXS0104UMZ
NXS0104UMZ
Nexperia USA Inc.
NXS0104UM/SOT8019/WLCSP12