PMV15UNEAR
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Nexperia USA Inc. PMV15UNEAR

Manufacturer No:
PMV15UNEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV15UNEAR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 7A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:19mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1220 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):610mW (Ta), 8.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV15UNEAR PMV65UNEAR   PMV15ENEAR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 2.8A (Ta) 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 7A, 4.5V 73mOhm @ 2.8A, 4.5V 20mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 900mV @ 250µA 1V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 6 nC @ 4.5 V 14 nC @ 10 V
Vgs (Max) ±8V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 10 V 291 pF @ 10 V 440 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 610mW (Ta), 8.3W (Tc) 940mW (Ta) 700mW (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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