PMV120ENEAR
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Nexperia USA Inc. PMV120ENEAR

Manufacturer No:
PMV120ENEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV120ENEAR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 2.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:123mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:275 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):513mW (Ta), 6.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV120ENEAR PMV130ENEAR   PMV100ENEAR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta) 2.1A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 123mOhm @ 2.1A, 10V 120mOhm @ 1.5A, 10V 72mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 10 V 3.6 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 275 pF @ 30 V 170 pF @ 20 V 160 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 513mW (Ta), 6.4W (Tc) 460mW (Ta), 5W (Tc) 460mW (Ta), 4.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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