PMV120ENEAR
  • Share:

Nexperia USA Inc. PMV120ENEAR

Manufacturer No:
PMV120ENEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV120ENEAR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 2.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:123mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:275 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):513mW (Ta), 6.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.41
757

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMV120ENEAR PMV130ENEAR   PMV100ENEAR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta) 2.1A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 123mOhm @ 2.1A, 10V 120mOhm @ 1.5A, 10V 72mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 10 V 3.6 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 275 pF @ 30 V 170 pF @ 20 V 160 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 513mW (Ta), 6.4W (Tc) 460mW (Ta), 5W (Tc) 460mW (Ta), 4.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IXFH16N120P
IXFH16N120P
IXYS
MOSFET N-CH 1200V 16A TO247AD
FDD6N50TM-WS
FDD6N50TM-WS
onsemi
MOSFET N-CH 500V 6A DPAK
IXTT20P50P
IXTT20P50P
IXYS
MOSFET P-CH 500V 20A TO268
RF1S45N02L
RF1S45N02L
Harris Corporation
45A, 20V, 0.022OHM, N-CHANNEL LO
IPN60R2K0PFD7SATMA1
IPN60R2K0PFD7SATMA1
Infineon Technologies
MOSFET N-CH 650V 3A SOT223
HUF76429S3S
HUF76429S3S
onsemi
MOSFET N-CH 60V 47A D2PAK
FDP20N50
FDP20N50
onsemi
MOSFET N-CH 500V 20A TO220-3
TK10A60D(STA4,Q,M)
TK10A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 10A TO220SIS
SI4172DY-T1-GE3
SI4172DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 15A 8SO
RJK5020DPK-00#T0
RJK5020DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 500V 40A TO3P
IRFS7734-7PPBF
IRFS7734-7PPBF
Infineon Technologies
MOSFET N-CH 75V 197A D2PAK
RD3H080SPFRATL
RD3H080SPFRATL
Rohm Semiconductor
MOSFET P-CH 45V 8A TO252

Related Product By Brand

PESD4V0W1BCSFYL
PESD4V0W1BCSFYL
Nexperia USA Inc.
TVS DIODE 4VWM 5.1VC DSN0603-2
PMEG4010CEH,115
PMEG4010CEH,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD123F
PMEG100T080ELPE-QZ
PMEG100T080ELPE-QZ
Nexperia USA Inc.
PMEG100T080ELPE-Q/SOT1289B/CFP
MM3Z11VT1GX
MM3Z11VT1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
SZMM5Z27VT5GF
SZMM5Z27VT5GF
Nexperia USA Inc.
SZMM5Z27VT5G/SOD523/SC-79
BZT52-C51J
BZT52-C51J
Nexperia USA Inc.
DIODE ZENER 51V 350MW SOD123
BZX38450-C27F
BZX38450-C27F
Nexperia USA Inc.
BZX38450-C27/SOD323/SOD2
74HC05PW,118
74HC05PW,118
Nexperia USA Inc.
IC INVERTER OD 6CH 1-INP 14TSSOP
74AUP1T14GXH
74AUP1T14GXH
Nexperia USA Inc.
IC INVERT SCHMITT 1CH 2IN 5X2SON
74HC02PW-Q100,118
74HC02PW-Q100,118
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP
74HCT30PW-Q100J
74HCT30PW-Q100J
Nexperia USA Inc.
IC GATE NAND 1CH 8-INP 14TSSOP
74LVCH16373ADGG-QJ
74LVCH16373ADGG-QJ
Nexperia USA Inc.
IC 16BIT BUS TXRX 48TSSOP