PMPB85ENEA/FX
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Nexperia USA Inc. PMPB85ENEA/FX

Manufacturer No:
PMPB85ENEA/FX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMPB85ENEA/FX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 4.4A 6DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:95mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:305 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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Similar Products

Part Number PMPB85ENEA/FX PMPB95ENEA/FX  
Manufacturer Nexperia USA Inc. NXP Semiconductors
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta) 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 3A, 10V 105mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V 14.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 305 pF @ 30 V 504 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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