PMPB55XNEAX
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Nexperia USA Inc. PMPB55XNEAX

Manufacturer No:
PMPB55XNEAX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMPB55XNEAX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 3.8A 6DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:72mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:255 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):550mW (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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Similar Products

Part Number PMPB55XNEAX PMPB55ENEAX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 60 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 3.8A, 4.5V 56mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.25V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V 12 nC @ 10 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 255 pF @ 15 V 435 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 550mW (Ta) 1.65W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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