PMPB50ENEAX
  • Share:

Nexperia USA Inc. PMPB50ENEAX

Manufacturer No:
PMPB50ENEAX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMPB50ENEAX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 5.1A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:43mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:271 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.9W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

-
576

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMPB50ENEAX PMPB50ENEX   PMPB55ENEAX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 60 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) 6.9A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 43mOhm @ 5.1A, 10V 43mOhm @ 5.1A, 10V 56mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 271 pF @ 15 V 271 pF @ 15 V 435 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 1.9W (Ta) 1.9mW (Ta) 1.65W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

PJQ5411_R2_00001
PJQ5411_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
HUF75332S3ST
HUF75332S3ST
Fairchild Semiconductor
MOSFET N-CH 55V 52A D2PAK
FDS7296N3
FDS7296N3
Fairchild Semiconductor
MOSFET N-CH 30V 15A 8SO
PSMN070-200B,118
PSMN070-200B,118
Nexperia USA Inc.
NEXPERIA PSMN070 - 35A, 200V, 0.
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
DMN10H170SK3-13
DMN10H170SK3-13
Diodes Incorporated
MOSFET N-CH 100V 12A TO252-3
BSC0501NSIATMA1
BSC0501NSIATMA1
Infineon Technologies
MOSFET N-CH 30V 29A/100A TDSON
PSMNR90-40YLHX
PSMNR90-40YLHX
Nexperia USA Inc.
MOSFET N-CH 40V 300A LFPAK56
IQE006NE2LM5CGATMA1
IQE006NE2LM5CGATMA1
Infineon Technologies
MOSFET N-CH 25V 41A/298A IPAK
TK7A60W,S4VX
TK7A60W,S4VX
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 7A TO220SIS
IRLML5103TR
IRLML5103TR
Infineon Technologies
MOSFET P-CH 30V 760MA SOT-23
IPA60R520C6XKSA1
IPA60R520C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 8.1A TO220-FP

Related Product By Brand

PTVS5V0P1UP,115
PTVS5V0P1UP,115
Nexperia USA Inc.
TVS DIODE 5VWM 9.2VC CFP5
BZX38450-C68-QX
BZX38450-C68-QX
Nexperia USA Inc.
BZX38450-C68-Q/SOD323/SOD2
PZU4.3B2L,315
PZU4.3B2L,315
Nexperia USA Inc.
DIODE ZENER 4.3V 250MW DFN1006-2
BCM847BS/ZLX
BCM847BS/ZLX
Nexperia USA Inc.
TRANS 2NPN 45V 0.1A 6TSSOP
PSMN034-100BS,118
PSMN034-100BS,118
Nexperia USA Inc.
MOSFET N-CH 100V 32A D2PAK
PMT280ENEAX
PMT280ENEAX
Nexperia USA Inc.
MOSFET N-CH 100V 1.5A SOT223
PSMN1R4-40YLD,115-NEX
PSMN1R4-40YLD,115-NEX
Nexperia USA Inc.
100A, 40V, 0.00185OHM, N CHANNEL
PHM10030DLSX
PHM10030DLSX
Nexperia USA Inc.
MOSFET N-CH LFPAK33
74LVT162244BDL,112
74LVT162244BDL,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 48SSOP
74LVCH162373ADGG118
74LVCH162373ADGG118
Nexperia USA Inc.
BUS DRIVER, LVC/LCX/Z SERIES
74AHC1G32GW-Q100,1
74AHC1G32GW-Q100,1
Nexperia USA Inc.
IC GATE OR 1CH 2-INP 5TSSOP
74AHC1G04GM,115
74AHC1G04GM,115
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON