PMPB215ENEAX
  • Share:

Nexperia USA Inc. PMPB215ENEAX

Manufacturer No:
PMPB215ENEAX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMPB215ENEAX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 1.9A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:230mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:215 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta), 15.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.55
467

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMPB215ENEAX PMPB25ENEAX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.9A, 10V 24mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 40 V 607 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta), 15.6W (Tc) 2.08W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
RJK0351DPA-00#J0
RJK0351DPA-00#J0
Renesas Electronics America Inc
MOSFET N-CH 30V 40A 8WPAK
TQM033NB04CR RLG
TQM033NB04CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 21A/121A PDFN56U
IPA60R360P7XKSA1
IPA60R360P7XKSA1
Infineon Technologies
MOSFET N-CHANNEL 650V 9A TO220
BUK6D43-40PX
BUK6D43-40PX
Nexperia USA Inc.
MOSFET P-CH 40V 6A DFN2020MD-6
IRFSL3206PBF
IRFSL3206PBF
Infineon Technologies
MOSFET N-CH 60V 120A TO262
IXFA5N100P
IXFA5N100P
IXYS
MOSFET N-CH 1000V 5A TO263
IRL3103LPBF
IRL3103LPBF
Infineon Technologies
MOSFET N-CH 30V 64A TO262
MTP20N15E
MTP20N15E
onsemi
MOSFET N-CH 150V 20A TO220AB
IXTH180N085T
IXTH180N085T
IXYS
MOSFET N-CH 85V 180A TO247
FKP330C
FKP330C
Sanken
MOSFET N-CH 330V 30A TO3P
BMS3004-1E
BMS3004-1E
onsemi
MOSFET P-CH 75V 68A TO220F-3SG

Related Product By Brand

PESD3V3S1BSFYL
PESD3V3S1BSFYL
Nexperia USA Inc.
TVS DIODE 3.3VWM 6VC DSN0603-2
PTVS17VP1UTP,115
PTVS17VP1UTP,115
Nexperia USA Inc.
TVS DIODE 17VWM 27.6VC CFP5
PMEG4010EPK/S500YL
PMEG4010EPK/S500YL
Nexperia USA Inc.
PMEG4010EPK - 40V, 1A LOW VF MEG
BZX79-C24,143
BZX79-C24,143
Nexperia USA Inc.
DIODE ZENER 24V 400MW ALF2
PZU3.0B1A,115
PZU3.0B1A,115
Nexperia USA Inc.
DIODE ZENER 3V 320MW SOD323
BZX84W-B47X
BZX84W-B47X
Nexperia USA Inc.
DIODE ZENER 47V 275MW SOT323
BZT52-C20X
BZT52-C20X
Nexperia USA Inc.
DIODE ZENER 20V 350MW SOD123
BUK7S2R5-40HJ
BUK7S2R5-40HJ
Nexperia USA Inc.
BUK7S2R5-40H/SOT1235/LFPAK88
74LVC1G06GS
74LVC1G06GS
Nexperia USA Inc.
NOW NEXPERIA 74LVC1G06GS - INVER
74HC123DB,118
74HC123DB,118
Nexperia USA Inc.
IC MULTIVIBRATOR 65NS 16SSOP
74HCT595BQ,115
74HCT595BQ,115
Nexperia USA Inc.
IC 8BIT SHIFT REGISTER 16-DHVQFN
74HC597PW-Q100J
74HC597PW-Q100J
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16TSSOP