PMPB215ENEAX
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Nexperia USA Inc. PMPB215ENEAX

Manufacturer No:
PMPB215ENEAX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMPB215ENEAX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 1.9A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:230mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:215 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta), 15.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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Similar Products

Part Number PMPB215ENEAX PMPB25ENEAX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.9A, 10V 24mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 40 V 607 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta), 15.6W (Tc) 2.08W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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