PMPB14XPX
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Nexperia USA Inc. PMPB14XPX

Manufacturer No:
PMPB14XPX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMPB14XPX Datasheet
ECAD Model:
-
Description:
MOSFET DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:12.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:19mOhm @ 8.6A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2303 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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Similar Products

Part Number PMPB14XPX PMPB14XNX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 40 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta) 8.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 8.6A, 4.5V 18mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V 28 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2303 pF @ 6 V 1625 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.9W (Ta) 3.8W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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