PMPB12R5EPX
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Nexperia USA Inc. PMPB12R5EPX

Manufacturer No:
PMPB12R5EPX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMPB12R5EPX Datasheet
ECAD Model:
-
Description:
PMPB12R5EP - 30 V, P-CHANNEL TRE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1392 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.9W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020M-6
Package / Case:6-UDFN Exposed Pad
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Similar Products

Part Number PMPB12R5EPX PMPB12R7EPX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) 8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 8.8A, 10V 15.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 49 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1392 pF @ 15 V 1638 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.9W (Ta), 12.5W (Tc) 1.9W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020M-6 DFN2020M-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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