Nexperia USA Inc.-PMPB11R2VPX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	14mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id:	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	39 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	2230 pF @ 6 V
FET Feature:	-
Power Dissipation (Max):	1.9W (Ta), 12.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN2020MD-6
Package / Case:	6-UDFN Exposed Pad

Nexperia USA Inc. PMPB11R2VPX