Nexperia USA Inc.-PMPB100XPEAX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3V, 4.5V
Rds On (Max) @ Id, Vgs:	122mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id:	1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5 nC @ 4.5 V
Vgs (Max):	+8V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	388 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	550mW (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN2020MD-6
Package / Case:	6-UDFN Exposed Pad

Nexperia USA Inc. PMPB100XPEAX