PMN48XPA,115
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Nexperia USA Inc. PMN48XPA,115

Manufacturer No:
PMN48XPA,115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
PMN48XPA,115 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 4.1A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):530mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
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Similar Products

Part Number PMN48XPA,115 PMN48XPA115   PMN48XP,115  
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) 4.1A (Ta) 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 55mOhm @ 2.4A, 4.5V 55mOhm @ 2.4A, 4.5V 55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V 1000 pF @ 10 V 1000 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 530mW (Ta), 6.25W (Tc) 530mW (Ta), 6.25W (Tc) 530mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457

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