PMN42XPEAH
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Nexperia USA Inc. PMN42XPEAH

Manufacturer No:
PMN42XPEAH
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMN42XPEAH Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 5.7A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:46mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.3 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1410 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta), 8.33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
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Similar Products

Part Number PMN42XPEAH PMN42XPEAX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta) 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 46mOhm @ 3A, 4.5V 46mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.3 nC @ 4.5 V 17.3 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1410 pF @ 10 V 1410 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta), 8.33W (Tc) 500mW (Ta), 8.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457

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