PMN30UNX
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Nexperia USA Inc. PMN30UNX

Manufacturer No:
PMN30UNX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMN30UNX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 4.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:635 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):530mW (Ta), 4.46W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
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Similar Products

Part Number PMN30UNX PMN30UNEX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 40mOhm @ 4.5A, 4.5V 36mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 9 nC @ 4.5 V
Vgs (Max) ±12V ±8V
Input Capacitance (Ciss) (Max) @ Vds 635 pF @ 15 V 558 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 530mW (Ta), 4.46W (Tc) 530mW (Ta), 4.46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457

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