PMN30ENEAX
  • Share:

Nexperia USA Inc. PMN30ENEAX

Manufacturer No:
PMN30ENEAX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMN30ENEAX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 5.4A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):667mW (Ta), 7.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
0 Remaining View Similar

In Stock

$0.47
702

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMN30ENEAX PMN230ENEAX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta) 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 5.4A, 10V 222mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.7 nC @ 10 V 3.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 20 V 110 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 667mW (Ta), 7.5W (Tc) 625mW (Ta), 5.4W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457

Related Product By Categories

IRFH5006TRPBF
IRFH5006TRPBF
Infineon Technologies
MOSFET N-CH 60V 21A/100A 8PQFN
BSC009NE2LS5ATMA1
BSC009NE2LS5ATMA1
Infineon Technologies
MOSFET N-CH 25V 41A/100A TDSON
BSC0803LSATMA1
BSC0803LSATMA1
Infineon Technologies
MOSFET N-CH 100V 10A/44A TDSON-6
BUK663R2-40C,118
BUK663R2-40C,118
Nexperia USA Inc.
NEXPERIA BUK663R2-40C - 100A, 40
IPP50R280CEXKSA1
IPP50R280CEXKSA1
Infineon Technologies
MOSFET N-CH 500V 13A TO220-3
STP9NM40N
STP9NM40N
STMicroelectronics
MOSFET N-CH 400V 5.6A TO220
NDS0610
NDS0610
onsemi
MOSFET P-CH 60V 120MA SOT-23
APT23F60B
APT23F60B
Microchip Technology
MOSFET N-CH 600V 24A TO247
IRFBF30S
IRFBF30S
Vishay Siliconix
MOSFET N-CH 900V 3.6A D2PAK
STW60NE10
STW60NE10
STMicroelectronics
MOSFET N-CH 100V 60A TO247-3
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
STF8NK85Z
STF8NK85Z
STMicroelectronics
MOSFET N-CH 850V 6.7A TO220FP

Related Product By Brand

PESD5V0U1UT/ZLR
PESD5V0U1UT/ZLR
Nexperia USA Inc.
TVS DIODE 5VWM 21VC TO236AB
PMEG2005EPK,315
PMEG2005EPK,315
Nexperia USA Inc.
DIODE SCHOT 20V 500MA DFN1608D-2
BZX58550-C15-QX
BZX58550-C15-QX
Nexperia USA Inc.
BZX58550-C15-Q/SOD523/SC-79
BZX884S-C3V3-QYL
BZX884S-C3V3-QYL
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
NHUMB10F
NHUMB10F
Nexperia USA Inc.
TRANS PREBIAS 2PNP 80V 6TSSOP
BC807-16QC-QZ
BC807-16QC-QZ
Nexperia USA Inc.
TRANS PNP 45V 0.5A DFN1412D-3
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
PBRP113ZT,215
PBRP113ZT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 40V TO236AB
PSMN6R0-30YLB,115
PSMN6R0-30YLB,115
Nexperia USA Inc.
MOSFET N-CH 30V 71A LFPAK56
PCMF1USB3S/CZ
PCMF1USB3S/CZ
Nexperia USA Inc.
CMC 2LN SMD ESD
74AUP2G57GU
74AUP2G57GU
Nexperia USA Inc.
NOW NEXPERIA 74AUP2G57GU - MAJOR
74LVC257ADB,118
74LVC257ADB,118
Nexperia USA Inc.
IC MULTIPLEXER 4 X 2:1 16SSOP