PMN120ENEAX
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Nexperia USA Inc. PMN120ENEAX

Manufacturer No:
PMN120ENEAX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMN120ENEAX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 2.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:123mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:196 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):670mW (Ta), 7.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
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Similar Products

Part Number PMN120ENEAX PMN120ENEX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 123mOhm @ 2.5A, 10V 123mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 7.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 30 V 275 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 670mW (Ta), 7.5W (Tc) 1.4W (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457

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