PMH600UNEH
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Nexperia USA Inc. PMH600UNEH

Manufacturer No:
PMH600UNEH
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMH600UNEH Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 800MA DFN0606-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.31 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:21.3 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta), 2.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN0606-3
Package / Case:3-XFDFN
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Similar Products

Part Number PMH600UNEH PMH400UNEH  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 800mA (Ta) 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V 460mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id 0.95V @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.31 nC @ 4.5 V 0.93 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 21.3 pF @ 10 V 4540 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 370mW (Ta), 2.2W (Tc) 360mW (Ta), 2.23W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN0606-3 DFN0606-3 (SOT8001)
Package / Case 3-XFDFN 3-XFDFN

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