Nexperia USA Inc.-PMH260UNEH - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	310mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.95 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	41 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	360mW (Ta), 2.23W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN0606-3 (SOT8001)
Package / Case:	3-XFDFN

Nexperia USA Inc. PMH260UNEH