Nexperia USA Inc.-PMH1200UPEH - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	520mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	1.6Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id:	0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1 nC @ 5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	33 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	380mW (Ta), 2.8W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN0606-3
Package / Case:	3-XFDFN

Nexperia USA Inc. PMH1200UPEH