Nexperia USA Inc.-PMGD780SN,115 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	490mA
Rds On (Max) @ Id, Vgs:	920mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.05nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	23pF @ 30V
Power - Max:	410mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	6-TSSOP

Nexperia USA Inc. PMGD780SN,115