PMEG60T10ELP-QX
  • Share:

Nexperia USA Inc. PMEG60T10ELP-QX

Manufacturer No:
PMEG60T10ELP-QX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG60T10ELP-QX Datasheet
ECAD Model:
-
Description:
SCHOTTKYS IN CFP PACKAGES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:590 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):9 ns
Current - Reverse Leakage @ Vr:800 nA @ 60 V
Capacitance @ Vr, F:280pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-128
Supplier Device Package:SOD-128/CFP5
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.13
6,999

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG60T10ELP-QX PMEG60T10ELR-QX   PMEG60T20ELP-QX   PMEG60T30ELP-QX   PMEG60T50ELP-QX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 60 V 60 V 60 V
Current - Average Rectified (Io) 1A 1A 2A 3A 5A
Voltage - Forward (Vf) (Max) @ If 590 mV @ 1 A 600 mV @ 1 A 620 mV @ 2 A 620 mV @ 3 A 690 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 9 ns 13 ns 14 ns 16 ns 16 ns
Current - Reverse Leakage @ Vr 800 nA @ 60 V 650 nA @ 60 V 1.2 µA @ 60 V 1.8 µA @ 60 V 1.8 µA @ 60 V
Capacitance @ Vr, F 280pF @ 1V, 1MHz 245pF @ 1V, 1MHz 400pF @ 1V, 1MHz 560pF @ 1V, 1MHz 560pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-128 SOD-123W SOD-128 SOD-128 SOD-128
Supplier Device Package SOD-128/CFP5 SOD-123W SOD-128/CFP5 SOD-128/CFP5 SOD-128/CFP5
Operating Temperature - Junction 175°C 175°C 175°C 175°C 175°C

Related Product By Categories

1N4148X-TP
1N4148X-TP
Micro Commercial Co
DIODE GEN PURP 75V 150MA SOD523
RMPG06JHE3_A/54
RMPG06JHE3_A/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MPG06
ER2G_R1_00001
ER2G_R1_00001
Panjit International Inc.
SMB, SUPER
FFSP0665A
FFSP0665A
onsemi
DIODE SCHOTTKY 650V TO220-2
FR303G
FR303G
SMC Diode Solutions
DIODE GPP 200V 3A DO201AD
SR310H
SR310H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A DO201AD
VIT2080S-E3/4W
VIT2080S-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 80V TO-262AA
SF1604G
SF1604G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A TO220AB
FFPF30UP20STU
FFPF30UP20STU
onsemi
DIODE GEN PURP 200V 30A TO220F
MBR7H35-E3/45
MBR7H35-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 7.5A TO220AC
SK12H60 A0G
SK12H60 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 12A DO201AD
MBRS240LT3H
MBRS240LT3H
onsemi
DIODE SCHOTTKY

Related Product By Brand

PESD2ETH-XR
PESD2ETH-XR
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
BZV55-C5V1,115
BZV55-C5V1,115
Nexperia USA Inc.
DIODE ZENER 5.1V 500MW LLDS
BZX585-B5V1,135
BZX585-B5V1,135
Nexperia USA Inc.
DIODE ZENER 5.1V 300MW SOD523
BZX84W-B2V4F
BZX84W-B2V4F
Nexperia USA Inc.
DIODE ZENER 2.4V 275MW SOT323
BZX38450-C1V8-QX
BZX38450-C1V8-QX
Nexperia USA Inc.
BZX38450-C1V8-Q/SOD323/SOD2
BC847W,115
BC847W,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
PBHV9050ZF
PBHV9050ZF
Nexperia USA Inc.
TRANS PNP 500V 0.25A SOT223
74AVCH4T245D,112
74AVCH4T245D,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 16SO
74LVC1G125GVXL
74LVC1G125GVXL
Nexperia USA Inc.
74LVC1G125 - BUS BUFFER/LINE DRI
74HCT2G02DP-Q100H
74HCT2G02DP-Q100H
Nexperia USA Inc.
IC GATE NOR 2CH 2-INP 8TSSOP
74AUP2G08GN
74AUP2G08GN
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8XSON
NPIC6C596ADJ
NPIC6C596ADJ
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC