PMEG6010ETR-QX
  • Share:

Nexperia USA Inc. PMEG6010ETR-QX

Manufacturer No:
PMEG6010ETR-QX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG6010ETR-QX Datasheet
ECAD Model:
-
Description:
SCHOTTKYS IN CFP PACKAGES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:530 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4.4 ns
Current - Reverse Leakage @ Vr:60 µA @ 60 V
Capacitance @ Vr, F:120pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.10
8,326

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG6010ETR-QX PMEG6020ETR-QX   PMEG4010ETR-QX   PMEG6010ELR-QX   PMEG6010ER-QX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 40 V 60 V 60 V
Current - Average Rectified (Io) 1A 2A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 530 mV @ 1 A 530 mV @ 2 A 490 mV @ 1 A 660 mV @ 1 A 530 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4.4 ns 8.5 ns 4.4 ns 4.5 ns -
Current - Reverse Leakage @ Vr 60 µA @ 60 V 150 µA @ 60 V 50 µA @ 40 V 300 nA @ 60 V 60 µA @ 60 V
Capacitance @ Vr, F 120pF @ 1V, 1MHz 240pF @ 1V, 1MHz 130pF @ 1V, 1MHz 110pF @ 1V, 1MHz 120pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOD-123W SOD-123W SOD-123W
Supplier Device Package SOD-123W SOD-123W SOD-123W SOD-123W SOD-123W
Operating Temperature - Junction 175°C 175°C 175°C 175°C 150°C

Related Product By Categories

ES1B_R1_00001
ES1B_R1_00001
Panjit International Inc.
SMA, SUPER
JANTXV1N5806US
JANTXV1N5806US
Microchip Technology
DIODE GEN PURP 150V 1A D5A
RGL41J-E3/97
RGL41J-E3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO213AB
PMEG6010ELR115
PMEG6010ELR115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
FR153GP-TP
FR153GP-TP
Micro Commercial Co
DIODE GPP FAST 1.5A DO-15
B120Q-13-F
B120Q-13-F
Diodes Incorporated
DIODE SCHOTTKY 20V 1A SMA
RS2D
RS2D
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
BYM07-50-E3/83
BYM07-50-E3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 500MA DO213AA
JANTX1N6638U
JANTX1N6638U
Microchip Technology
DIODE GEN PURP 125V 300MA B-MELF
JANTXV1N6642UBD/TR
JANTXV1N6642UBD/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
MBRF7H35HE3/45
MBRF7H35HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 7.5A ITO220AC
SR809HB0G
SR809HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 8A DO201AD

Related Product By Brand

MMBZ33VCL,215
MMBZ33VCL,215
Nexperia USA Inc.
TVS DIODE 26VWM 46VC TO236AB
BZX884-B11,315
BZX884-B11,315
Nexperia USA Inc.
DIODE ZENER 11V 250MW DFN1006-2
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
PSMN2R6-60PSQ
PSMN2R6-60PSQ
Nexperia USA Inc.
MOSFET N-CH 60V 150A TO220AB
BUK6Y19-30PX
BUK6Y19-30PX
Nexperia USA Inc.
MOSFET P-CH 30V 45A LFPAK56
74AUP2G240GS,115
74AUP2G240GS,115
Nexperia USA Inc.
74AUP2G240 - LOW-POWER DUAL INVE
74LVC1G07GW-Q100H
74LVC1G07GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74HC11D,653
74HC11D,653
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SO
74AUP2G38GN,115
74AUP2G38GN,115
Nexperia USA Inc.
74AUP2G38 - LOW-POWER DUAL 2-INP
74LVC1G00GW,165
74LVC1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HC423D,653
74HC423D,653
Nexperia USA Inc.
IC MULTIVIBRATOR 20NS 16SO
74HCT280D,652
74HCT280D,652
Nexperia USA Inc.
IC PARITY GEN/CHKER 9-BIT 14SO