PMEG40T30ER-QX
  • Share:

Nexperia USA Inc. PMEG40T30ER-QX

Manufacturer No:
PMEG40T30ER-QX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG40T30ER-QX Datasheet
ECAD Model:
-
Description:
SCHOTTKYS IN CFP PACKAGES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:525 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):18 ns
Current - Reverse Leakage @ Vr:28 µA @ 40 V
Capacitance @ Vr, F:560pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.12
6,237

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG40T30ER-QX PMEG4030ER-QX   PMEG40T10ER-QX   PMEG40T20ER-QX   PMEG40T30EP-QX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V 40 V 40 V
Current - Average Rectified (Io) 3A 3A 1A 2A 3A
Voltage - Forward (Vf) (Max) @ If 525 mV @ 3 A 540 mV @ 3 A 460 mV @ 1 A 515 mV @ 2 A 525 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 18 ns - 11.5 ns 11.5 ns 21 ns
Current - Reverse Leakage @ Vr 28 µA @ 40 V 100 µA @ 40 V 22 µA @ 40 V 22 µA @ 40 V 28 µA @ 40 V
Capacitance @ Vr, F 560pF @ 1V, 1MHz 250pF @ 1V, 1MHz 350pF @ 1V, 1MHz 350pF @ 1V, 1MHz 560pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOD-123W SOD-123W SOD-128
Supplier Device Package SOD-123W SOD-123W SOD-123W SOD-123W SOD-128/CFP5
Operating Temperature - Junction 175°C 150°C 175°C 175°C 175°C

Related Product By Categories

VS-HFA16PB120-N3
VS-HFA16PB120-N3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 16A TO247AC
HERF1007GAH
HERF1007GAH
Taiwan Semiconductor Corporation
DIODE, HIGH EFFICIENT
11DQ06
11DQ06
SMC Diode Solutions
1.1A, 60V, DO-41, SCHOTTKY RECTI
MURS120-M3/5BT
MURS120-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO214AA
PMEG2020EPA,115
PMEG2020EPA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A 3HUSON
CURC304-G
CURC304-G
Comchip Technology
DIODE GEN PURP 400V 3A DO214AB
SR804H
SR804H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 8A DO201AD
MA2J72800L
MA2J72800L
Panasonic Electronic Components
DIODE SCHOTTKY 30V 30MA SMINI2
VS-90SQ030
VS-90SQ030
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 9A DO204AR
S4A R7G
S4A R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO214AB
UGA8120HC0G
UGA8120HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
1N4001GHB0G
1N4001GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

PTVS18VS1UR,115
PTVS18VS1UR,115
Nexperia USA Inc.
TVS DIODE 18VWM 29.2VC CFP3
BZA456A,115
BZA456A,115
Nexperia USA Inc.
TVS DIODE 5.6VWM 8VC 6TSOP
PESD4USB5R-TBRX
PESD4USB5R-TBRX
Nexperia USA Inc.
TVS DIODE DFN2510A-10
PMEG2005EGWJ
PMEG2005EGWJ
Nexperia USA Inc.
DIODE SCHOTTKY 20V 500MA SOD123
BZB984-C4V7,115
BZB984-C4V7,115
Nexperia USA Inc.
DIODE ZENER ARRAY 4.7V SOT663
BZX79-C4V3,133
BZX79-C4V3,133
Nexperia USA Inc.
DIODE ZENER 4.3V 400MW ALF2
BC55-10PASX
BC55-10PASX
Nexperia USA Inc.
TRANS NPN 60V 1A DFN2020D-3
PMBF170,215
PMBF170,215
Nexperia USA Inc.
MOSFET N-CH 60V 300MA TO236AB
PXP012-30QLJ
PXP012-30QLJ
Nexperia USA Inc.
P-CHANNEL TRENCH MOSFET
74AHCT14D,118
74AHCT14D,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
XC7SET02GW,125
XC7SET02GW,125
Nexperia USA Inc.
IC GATE NOR 1CH 2-INP 5TSSOP
74HC32PW-Q100,118
74HC32PW-Q100,118
Nexperia USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP