PMEG40T10ER-QX
  • Share:

Nexperia USA Inc. PMEG40T10ER-QX

Manufacturer No:
PMEG40T10ER-QX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG40T10ER-QX Datasheet
ECAD Model:
-
Description:
SCHOTTKYS IN CFP PACKAGES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:460 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):11.5 ns
Current - Reverse Leakage @ Vr:22 µA @ 40 V
Capacitance @ Vr, F:350pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.11
6,851

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG40T10ER-QX PMEG40T20ER-QX   PMEG40T30ER-QX   PMEG4010ER-QX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V 40 V
Current - Average Rectified (Io) 1A 2A 3A 1A
Voltage - Forward (Vf) (Max) @ If 460 mV @ 1 A 515 mV @ 2 A 525 mV @ 3 A 490 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 11.5 ns 11.5 ns 18 ns -
Current - Reverse Leakage @ Vr 22 µA @ 40 V 22 µA @ 40 V 28 µA @ 40 V 50 µA @ 40 V
Capacitance @ Vr, F 350pF @ 1V, 1MHz 350pF @ 1V, 1MHz 560pF @ 1V, 1MHz 130pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOD-123W SOD-123W
Supplier Device Package SOD-123W SOD-123W SOD-123W SOD-123W
Operating Temperature - Junction 175°C 175°C 175°C 150°C

Related Product By Categories

RS3J V7G
RS3J V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
NTE6038
NTE6038
NTE Electronics, Inc
R-500 PRV 60A CATH CASE
NTE6070
NTE6070
NTE Electronics, Inc
R-1600V 85A CATHODE CASE
B160Q-13-F
B160Q-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 1A SMA
1N4148WS-E3-18
1N4148WS-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
IDT06S60C
IDT06S60C
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
SD103AW-AQ
SD103AW-AQ
Diotec Semiconductor
SchottkyD, 40V, 0.35A
80EPF04
80EPF04
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 80A TO247AC
IDH10S60CAKSA1
IDH10S60CAKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO220-2
S1BLHMTG
S1BLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
FM805P
FM805P
Rectron USA
DIODE GP GLASS 8A 600V DO277
RB201A60T-31
RB201A60T-31
Rohm Semiconductor
DIODE SCHOTTKY 60V 2A MSR

Related Product By Brand

PESD3V3L1ULSYL
PESD3V3L1ULSYL
Nexperia USA Inc.
TVS DIODE 3.3VWM DFN1006BD-2
MMBZ10VAL,215
MMBZ10VAL,215
Nexperia USA Inc.
TVS DIODE 6.5VWM 14.2VC TO236AB
PMEG4020ER-QX
PMEG4020ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX8850S-C16YL
BZX8850S-C16YL
Nexperia USA Inc.
BZX8850S-C16/SOD882BD/XSON2
PZU6.2B1A,115
PZU6.2B1A,115
Nexperia USA Inc.
DIODE ZENER 6.2V 320MW SOD323
PDZ16B-QX
PDZ16B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BF620,115
BF620,115
Nexperia USA Inc.
TRANS NPN 300V 0.05A SOT89
NXV75UPR
NXV75UPR
Nexperia USA Inc.
NXV75UP/SOT23/TO-236AB
BUK6Y10-30PX
BUK6Y10-30PX
Nexperia USA Inc.
MOSFET P-CH 30V 80A LFPAK56
PMV164ENER
PMV164ENER
Nexperia USA Inc.
PMV164ENE/SOT23/TO-236AB
74LVC86ABQ,115
74LVC86ABQ,115
Nexperia USA Inc.
IC GATE XOR 4CH 2-INP 14DHVQFN
74HCT32BQ,115
74HCT32BQ,115
Nexperia USA Inc.
IC GATE OR 4CH 2-INP 14DHVQFN