PMEG4010EJ,115
  • Share:

Nexperia USA Inc. PMEG4010EJ,115

Manufacturer No:
PMEG4010EJ,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG4010EJ,115 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 40V 1A SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:640 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 40 V
Capacitance @ Vr, F:50pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.41
665

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG4010EJ,115 PMEG4010ER,115   PMEG4010EP,115   PMEG4010CEJ,115   PMEG4010EH,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V 40 V 40 V
Current - Average Rectified (Io) 1A (DC) 1A 1A 1A (DC) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 640 mV @ 1 A 490 mV @ 1 A 490 mV @ 1 A 570 mV @ 1 A 640 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 100 µA @ 40 V 50 µA @ 40 V 50 µA @ 40 V 50 µA @ 40 V 100 µA @ 40 V
Capacitance @ Vr, F 50pF @ 1V, 1MHz 130pF @ 1V, 1MHz 130pF @ 1V, 1MHz 77pF @ 1V, 1MHz 50pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-90, SOD-323F SOD-123W SOD-128 SC-90, SOD-323F SOD-123F
Supplier Device Package SOD-323F SOD-123W SOD-128/CFP5 SOD-323F SOD-123F
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

SS110-TP
SS110-TP
Micro Commercial Co
DIODE SCHOTTKY 100V 1A SMA
RS2JA R3G
RS2JA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO214AC
MUR460 A0G
MUR460 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
LQA16T300
LQA16T300
Power Integrations
DIODE GEN PURP 300V 16A TO220AC
BAR46FILM
BAR46FILM
STMicroelectronics
DIODE SCHOTTKY 100V 150MA SOT23
V20150SG-M3/4W
V20150SG-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 150V TO-220AB
1N647-1E3/TR
1N647-1E3/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
BYT12PI-1000
BYT12PI-1000
STMicroelectronics
DIODE GEN PURP 1KV 12A TO220AC
FFPF10UP30STU
FFPF10UP30STU
onsemi
DIODE GEN PURP 300V 10A TO220F
SS315HM6G
SS315HM6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A DO214AB
MUR110SHR5G
MUR110SHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AA
SF1608GHC0G
SF1608GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A TO220AB

Related Product By Brand

PTVS36VS1UTR,115
PTVS36VS1UTR,115
Nexperia USA Inc.
TVS DIODE 36VWM 58.1VC CFP3
IP4352CX24/LF,135
IP4352CX24/LF,135
Nexperia USA Inc.
TVS DIODE 24WLCSP
PMEG045T030EPDZ
PMEG045T030EPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 45V 3A CFP15
BAS321-QF
BAS321-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BZX884-C18,315
BZX884-C18,315
Nexperia USA Inc.
DIODE ZENER 18V 250MW DFN1006-2
BZX84W-C7V5F
BZX84W-C7V5F
Nexperia USA Inc.
DIODE ZENER 7.5V 275MW SOT323
PDZ8.2B-QX
PDZ8.2B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PMV65ENEAR
PMV65ENEAR
Nexperia USA Inc.
MOSFET N-CH 40V 2.7A TO236AB
HEF4051BT,013
HEF4051BT,013
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16SOIC
74LVT2244DB,118
74LVT2244DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 20SSOP
74HCT367DB,118
74HCT367DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 16SSOP
BZX84-A75215
BZX84-A75215
Nexperia USA Inc.
NOW NEXPERIA ZENER DIODE, 75V, 1