PMEG4010CEJ,115
  • Share:

Nexperia USA Inc. PMEG4010CEJ,115

Manufacturer No:
PMEG4010CEJ,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG4010CEJ,115 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 40V 1A SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:570 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 40 V
Capacitance @ Vr, F:77pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.40
726

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG4010CEJ,115 PMEG6010CEJ,115   PMEG4010EJ,115   PMEG4010CEH,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 60 V 40 V 40 V
Current - Average Rectified (Io) 1A (DC) 1A (DC) 1A (DC) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 570 mV @ 1 A 660 mV @ 1 A 640 mV @ 1 A 570 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 50 µA @ 40 V 50 µA @ 60 V 100 µA @ 40 V 50 µA @ 40 V
Capacitance @ Vr, F 77pF @ 1V, 1MHz 68pF @ 1V, 1MHz 50pF @ 1V, 1MHz 77pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-90, SOD-323F SC-90, SOD-323F SC-90, SOD-323F SOD-123F
Supplier Device Package SOD-323F SOD-323F SOD-323F SOD-123F
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

S5KB
S5KB
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AA
1PS76SB10,135
1PS76SB10,135
Nexperia USA Inc.
DIODE SCHOTTKY 30V 200MA SOD323
S4PJHM3_A/H
S4PJHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A TO277A
R1200
R1200
Rectron USA
DIODE GEN PURP 1200V 1A DO41
ES1E-HF
ES1E-HF
Comchip Technology
RECTIFIER SUPER FAST RECOVERY 30
SB220E-G
SB220E-G
Comchip Technology
DIODE SCHOTTKY 20V 2A DO15
BYWF29-50HE3_A/P
BYWF29-50HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 8A ITO220AC
GR2JA-F1-3000HF
GR2JA-F1-3000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 2A DO214AC
STTA112U
STTA112U
STMicroelectronics
DIODE GEN PURP 1.2KV 1A SMB
MBRB1050HE3/45
MBRB1050HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 10A TO263AB
VS-20ETS08FPPBF
VS-20ETS08FPPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 20A TO220FP
SFT17G A0G
SFT17G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A TS-1

Related Product By Brand

BZX8450-C43-QR
BZX8450-C43-QR
Nexperia USA Inc.
BZX8450-C43-Q/SOT23/TO-236AB
BZT52-C2V7J
BZT52-C2V7J
Nexperia USA Inc.
DIODE ZENER 2.7V 350MW SOD123
PXTA92,115
PXTA92,115
Nexperia USA Inc.
TRANS PNP 300V 0.1A SOT89
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
PDTD113EUX
PDTD113EUX
Nexperia USA Inc.
TRANS PREBIAS NPN 0.425W
ON5452,518
ON5452,518
Nexperia USA Inc.
ON5452 - RF POWER MOSFET
BUK7S1R2-40HJ
BUK7S1R2-40HJ
Nexperia USA Inc.
MOSFET N-CH 40V 300A LFPAK88
BSS84AKMB,315
BSS84AKMB,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006B-3
BUK9520-100B,127
BUK9520-100B,127
Nexperia USA Inc.
MOSFET N-CH 100V 63A TO220AB
PMPB50ENEAX
PMPB50ENEAX
Nexperia USA Inc.
MOSFET N-CH 30V 5.1A DFN2020MD-6
74AHCT125BQ-Q100,1
74AHCT125BQ-Q100,1
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14DHVQFN
74LVC2G125DC-Q100H
74LVC2G125DC-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 8VSSOP