PMEG4002AESFYL
  • Share:

Nexperia USA Inc. PMEG4002AESFYL

Manufacturer No:
PMEG4002AESFYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG4002AESFYL Datasheet
ECAD Model:
-
Description:
DIODE SCHOT 40V 200MA DSN0603-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:525 mV @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):1.25 ns
Current - Reverse Leakage @ Vr:80 µA @ 40 V
Capacitance @ Vr, F:18pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:0201 (0603 Metric)
Supplier Device Package:DSN0603-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.42
1,717

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG4002AESFYL PMEG4005AESFYL   PMEG4002ESFYL   PMEG4002AESFCYL  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky -
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V -
Current - Average Rectified (Io) 200mA 500mA 200mA -
Voltage - Forward (Vf) (Max) @ If 525 mV @ 200 mA 820 mV @ 500 mA 600 mV @ 200 mA -
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed -
Reverse Recovery Time (trr) 1.25 ns 1.25 ns 1.28 ns -
Current - Reverse Leakage @ Vr 80 µA @ 40 V 80 µA @ 40 V 6.5 µA @ 40 V -
Capacitance @ Vr, F 18pF @ 1V, 1MHz 18pF @ 1V, 1MHz 17pF @ 1V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case 0201 (0603 Metric) 0201 (0603 Metric) 0201 (0603 Metric) -
Supplier Device Package DSN0603-2 DSN0603-2 DSN0603-2 -
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) -

Related Product By Categories

S3K-CT
S3K-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
TST30L100CW
TST30L100CW
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 15A TO220AB
ES1C
ES1C
onsemi
DIODE GEN PURP 150V 1A SMA
VS-8EWF02S-M3
VS-8EWF02S-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO252AA
HVP14
HVP14
Rectron USA
DIODE GEN PURP 14000V 750MA HVP
VS-SD823C20S20C
VS-SD823C20S20C
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2KV 810A B-43
1N4384GP-E3/73
1N4384GP-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AC
GI250-4HE3/73
GI250-4HE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 4KV 250MA DO204
UF4002HR1G
UF4002HR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
HER204G-AP
HER204G-AP
Micro Commercial Co
DIODE GPP HE 2A DO-15
1SS380TE-17
1SS380TE-17
Rohm Semiconductor
DIODE GEN PURP 35V 100MA UMD2
RR1LAM4STFTR
RR1LAM4STFTR
Rohm Semiconductor
RECTIFYING DIODE (AEC-Q101 QUALI

Related Product By Brand

PTVS13VP1UP,115
PTVS13VP1UP,115
Nexperia USA Inc.
TVS DIODE 13VWM 21.5VC CFP5
PMEG2010BELD,315
PMEG2010BELD,315
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A DFN1006-2
BZT52-C36J
BZT52-C36J
Nexperia USA Inc.
DIODE ZENER 36V 350MW SOD123
BZX884S-B4V3YL
BZX884S-B4V3YL
Nexperia USA Inc.
DIODE ZENER 4.3V 365MW 2DFN
BZX58550-C6V2X
BZX58550-C6V2X
Nexperia USA Inc.
BZX58550-C6V2/SOD523/SC-79
PUMB1/DG/B3,115
PUMB1/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2PNP 50V 6TSSOP
BUK9609-75A,118
BUK9609-75A,118
Nexperia USA Inc.
MOSFET N-CH 75V 75A D2PAK
PSMN1R2-55SLH
PSMN1R2-55SLH
Nexperia USA Inc.
N-CHANNEL 55 V, 1.03 MOHM, 330 A
PSMN1R6-30PL,127
PSMN1R6-30PL,127
Nexperia USA Inc.
MOSFET N-CH 30V 100A TO220AB
74LV244D-Q100J
74LV244D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V 20SO
74AHC3G14GT,115
74AHC3G14GT,115
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3-IN 8XSON
74AUP1G32GS,132
74AUP1G32GS,132
Nexperia USA Inc.
IC GATE OR 1CH 2-INP 6XSON