PMEG3010EB,115
  • Share:

Nexperia USA Inc. PMEG3010EB,115

Manufacturer No:
PMEG3010EB,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG3010EB,115 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 30V 1A SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:680 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:30pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.50
293

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG3010EB,115 PMEG3010EH,115   PMEG3010EJ,115   PMEG3010ER,115   PMEG3010EP,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 1A (DC) 1A (DC) 1A (DC) 1A 1A
Voltage - Forward (Vf) (Max) @ If 680 mV @ 1 A 560 mV @ 1 A 560 mV @ 1 A 360 mV @ 1 A 360 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 150 µA @ 30 V 150 µA @ 30 V 1.5 mA @ 30 V 1.5 mA @ 30 V
Capacitance @ Vr, F 30pF @ 1V, 1MHz 70pF @ 1V, 1MHz 70pF @ 1V, 1MHz 170pF @ 1V, 1MHz 170pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-79, SOD-523 SOD-123F SC-90, SOD-323F SOD-123W SOD-128
Supplier Device Package SOD-523 SOD-123F SOD-323F SOD-123W SOD-128/CFP5
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAS21,215
BAS21,215
Nexperia USA Inc.
DIODE GP 200V 200MA TO236AB
ES3DV
ES3DV
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
VBT1045BP-E3/4W
VBT1045BP-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 10A TO263AB
1N4148-1/TR
1N4148-1/TR
Microchip Technology
GLASS AXIAL SWITCHING DIODE
SL26B
SL26B
SURGE
2A -60V - SMB (DO-214AA) - RECTI
SM2000
SM2000
Diotec Semiconductor
ST Rect, 2000V, 1A
MA2SD190GL
MA2SD190GL
Panasonic Electronic Components
DIODE SCHOTTKY 20V 200MA SSMINI2
SS38HE-TP
SS38HE-TP
Micro Commercial Co
DIODE SCHOTTKY 80V 3A SOD123HE
1N4007-N-0-3-AP
1N4007-N-0-3-AP
Micro Commercial Co
DIODE GEN PURP 1KV 1A DO-41
UF1G R1G
UF1G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
HS1ML RTG
HS1ML RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A SUB SMA
SF58G-AP
SF58G-AP
Micro Commercial Co
DIODE GPP HE 5A DO-201AD

Related Product By Brand

BAT54SW,115
BAT54SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT323
BAS316/ZL115
BAS316/ZL115
Nexperia USA Inc.
BAS316 - RECTIFIER DIODE
PDZ33BGWJ
PDZ33BGWJ
Nexperia USA Inc.
DIODE ZENER 33V 365MW SOD123
PDZ24B-QX
PDZ24B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PUMH2F
PUMH2F
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
PEMH4,115
PEMH4,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BSP41,115
BSP41,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT223
PDTB114ETR
PDTB114ETR
Nexperia USA Inc.
TRANS PREBIAS PNP 0.46W
BUK963R2-40B,118
BUK963R2-40B,118
Nexperia USA Inc.
NEXPERIA BUK963R2-40B - 100A, 40
74LVC1G17GV,125
74LVC1G17GV,125
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V SC74A
74HC6323AD,118
74HC6323AD,118
Nexperia USA Inc.
74HC6323A - NOW NEXPERIA 74HC632
74AUP1G00GM,115
74AUP1G00GM,115
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 6XSON