PMEG3010BER-QX
  • Share:

Nexperia USA Inc. PMEG3010BER-QX

Manufacturer No:
PMEG3010BER-QX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG3010BER-QX Datasheet
ECAD Model:
-
Description:
SCHOTTKYS IN CFP PACKAGES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 30 V
Capacitance @ Vr, F:170pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:150°C
0 Remaining View Similar

In Stock

$0.11
3,955

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG3010BER-QX PMEG3020BER-QX   PMEG3010ER-QX   PMEG2010BER-QX   PMEG3010BEP-QX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 20 V 30 V
Current - Average Rectified (Io) 1A 2A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A 520 mV @ 2 A 360 mV @ 1 A 450 mV @ 1 A 450 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 50 µA @ 30 V 50 µA @ 30 V 1.5 mA @ 30 V 50 µA @ 20 V 50 µA @ 30 V
Capacitance @ Vr, F 170pF @ 1V, 1MHz 170pF @ 1V, 1MHz 170pF @ 1V, 1MHz 185pF @ 1V, 1MHz 170pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOD-123W SOD-123W SOD-128
Supplier Device Package SOD-123W SOD-123W SOD-123W SOD-123W SOD-128/CFP5
Operating Temperature - Junction 150°C 150°C 150°C 150°C 150°C

Related Product By Categories

MBRD835LT4G
MBRD835LT4G
onsemi
DIODE SCHOTTKY 35V 8A DPAK
MSS1P4HM3_A/H
MSS1P4HM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A MICROSMP
MMBD4148 RFG
MMBD4148 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 200MA SOT23
MURS360S-M3/52T
MURS360S-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO214AA
GI502-E3/54
GI502-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO201AD
SS320
SS320
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 3A 200V DO-214AB
31GF6-M3/73
31GF6-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
UFS340J/TR13
UFS340J/TR13
Microchip Technology
DIODE GEN PURP 400V 3A DO214AB
FFPF15UP20STU
FFPF15UP20STU
onsemi
DIODE GEN PURP 200V 15A TO220F
SBLB1040HE3/45
SBLB1040HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 10A TO263AB
MBRF16100
MBRF16100
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 16A ITO220
RSX101VYM30FHTR
RSX101VYM30FHTR
Rohm Semiconductor
SCHOTTKY BARRIER DIODE (AEC-Q101

Related Product By Brand

PESD4V0X1BESFYL
PESD4V0X1BESFYL
Nexperia USA Inc.
TVS DIODE
BAS21/8R
BAS21/8R
Nexperia USA Inc.
BAS21 - HIGH VOLTAGE SWITCHING D
BZX884S-B16-QYL
BZX884S-B16-QYL
Nexperia USA Inc.
BZX884S-B16-Q/SOD882BD/XSON2
MM5Z2V4T5GF
MM5Z2V4T5GF
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
BZV90-C5V1,115
BZV90-C5V1,115
Nexperia USA Inc.
DIODE ZENER 5.1V 1.5W SOT223
BZX84W-B6V8X
BZX84W-B6V8X
Nexperia USA Inc.
DIODE ZENER 6.8V 275MW SOT323
PDTA124TT,215
PDTA124TT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
74AVCH4T245D,112
74AVCH4T245D,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 16SO
74AUP2G58DPJ
74AUP2G58DPJ
Nexperia USA Inc.
IC GATE MULTI FUNCTION 10TSSOP
74AHCT1G86GV,125
74AHCT1G86GV,125
Nexperia USA Inc.
IC GATE XOR 1CH 2-INP SC74A
74HCT27PW-Q100J
74HCT27PW-Q100J
Nexperia USA Inc.
IC GATE NOR 3CH 3-INP 14TSSOP
OP540/BD/C3,027
OP540/BD/C3,027
Nexperia USA Inc.
OP540/BD - CUSTOM MOSFET