PMEG3010AESBZ
  • Share:

Nexperia USA Inc. PMEG3010AESBZ

Manufacturer No:
PMEG3010AESBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG3010AESBZ Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 30V 1A DSN1006-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:480 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3.5 ns
Current - Reverse Leakage @ Vr:1.25 mA @ 30 V
Capacitance @ Vr, F:32pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:DSN1006-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
19

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG3010AESBZ PMEG3010ESBZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 480 mV @ 1 A 565 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3.5 ns 3.2 ns
Current - Reverse Leakage @ Vr 1.25 mA @ 30 V 45 µA @ 30 V
Capacitance @ Vr, F 32pF @ 10V, 1MHz 32pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN
Supplier Device Package DSN1006-2 DSN1006-2
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

BA157-E3/54
BA157-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
SBAS20LT1G
SBAS20LT1G
onsemi
DIODE GEN PURP 200V 200MA SOT23
SD101CW-E3-08
SD101CW-E3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 30MA SOD123
NSVBAT54LT1G
NSVBAT54LT1G
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BYM11-800-E3/97
BYM11-800-E3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO213AB
GP10GE-E3/54
GP10GE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
VS-1N1190A
VS-1N1190A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 40A DO203AB
US1M-13
US1M-13
Diodes Incorporated
DIODE GEN PURP 1KV 1A SMA
MURS210T3
MURS210T3
onsemi
DIODE GEN PURP 100V 2A SMB
JANTX1N1184
JANTX1N1184
Microchip Technology
DIODE GEN PURP 100V 35A DO5
JANKCA1N5302
JANKCA1N5302
Microchip Technology
CURRENT REGULATOR
RB162LAM-60TFTR
RB162LAM-60TFTR
Rohm Semiconductor
AUTOMOTIVE SCHOTTKY BARRIER DIOD

Related Product By Brand

PZU12BA,115
PZU12BA,115
Nexperia USA Inc.
DIODE ZENER 12V 320MW SOD323
BZX8450-C18VL
BZX8450-C18VL
Nexperia USA Inc.
BZX8450-C18/SOT23/TO-236AB
BZX884S-C51YL
BZX884S-C51YL
Nexperia USA Inc.
BZX884S-C51/SOD882BD/XSON2
74HCT1G66GV-Q100H
74HCT1G66GV-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSOP
74LV4053PW-Q100J
74LV4053PW-Q100J
Nexperia USA Inc.
IC MUX/DEMUX TRIPLE 2X1 16TSSOP
74ALVCH16952DGG,11
74ALVCH16952DGG,11
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 56TSSOP
74HCT377DB,118
74HCT377DB,118
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SSOP
74HCT03PW,118
74HCT03PW,118
Nexperia USA Inc.
IC GATE NAND OD 4CH 2-IN 14TSSOP
74HCT3G14DP,125
74HCT3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
HEF4021BT,653
HEF4021BT,653
Nexperia USA Inc.
IC STATIC SHIFT REG 8BIT 16SOIC
74AHC138PW-Q100J
74AHC138PW-Q100J
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16TSSOP
74AVC2T45DP,125
74AVC2T45DP,125
Nexperia USA Inc.
IC TRNSLTR BIDIRECTIONAL 8TSSOP