PMEG3010AESBZ
  • Share:

Nexperia USA Inc. PMEG3010AESBZ

Manufacturer No:
PMEG3010AESBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG3010AESBZ Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 30V 1A DSN1006-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:480 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3.5 ns
Current - Reverse Leakage @ Vr:1.25 mA @ 30 V
Capacitance @ Vr, F:32pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:DSN1006-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
19

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG3010AESBZ PMEG3010ESBZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 480 mV @ 1 A 565 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3.5 ns 3.2 ns
Current - Reverse Leakage @ Vr 1.25 mA @ 30 V 45 µA @ 30 V
Capacitance @ Vr, F 32pF @ 10V, 1MHz 32pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN
Supplier Device Package DSN1006-2 DSN1006-2
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

SR23W_R1_00001
SR23W_R1_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
STTH3R02QRL
STTH3R02QRL
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
STBR3012G2Y-TR
STBR3012G2Y-TR
STMicroelectronics
AUTOMOTIVE-GRADE BRIDGE RECTIFIE
DSDI60-16A
DSDI60-16A
IXYS
DIODE GEN PURP 1.6KV 63A TO247AD
SB220_R2_00001
SB220_R2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
SD101BWS-HE3-08
SD101BWS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 150MW 50V SOD323
BYG10Y-M3/TR3
BYG10Y-M3/TR3
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1.6KV 1.5A
JAN1N5550US/TR
JAN1N5550US/TR
Microchip Technology
RECTIFIER UFR,FRR
BYV10X-600P127
BYV10X-600P127
NXP USA Inc.
NOW WEEN - BYV10X-600P - ULTRAFA
30EPF04
30EPF04
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 30A TO247AC
SDT08S60
SDT08S60
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO220-2
SRT13HA1G
SRT13HA1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A TS-1

Related Product By Brand

SZMM5Z12VT5GF
SZMM5Z12VT5GF
Nexperia USA Inc.
SZMM5Z12VT5G/SOD523/SC-79
BZX38450-C11X
BZX38450-C11X
Nexperia USA Inc.
BZX38450-C11/SOD323/SOD2
BZX8850S-C8V2-QYL
BZX8850S-C8V2-QYL
Nexperia USA Inc.
BZX8850S-C8V2-Q/SOD882BD/XSON2
PBSS2540MB,315
PBSS2540MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.5A DFN1006B-3
74LVC3G17DP,125
74LVC3G17DP,125
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 8TSSOP
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74HC4050PW-Q100J
74HC4050PW-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16TSSOP
74LVCH16374ADGG-QJ
74LVCH16374ADGG-QJ
Nexperia USA Inc.
IC FF D-TYPE DUAL 8BIT 48TSSOP
74AUP1G58GXZ
74AUP1G58GXZ
Nexperia USA Inc.
NOW NEXPERIA 74AUP1G58GX - LOGIC
74HC86PW-Q100,118
74HC86PW-Q100,118
Nexperia USA Inc.
IC GATE XOR 4CH 2-INP 14TSSOP
TL431FDT,215
TL431FDT,215
Nexperia USA Inc.
IC VREF SHUNT ADJ 2% TO236AB
BZT52-C36,118
BZT52-C36,118
Nexperia USA Inc.
BZT52-C36 - ZENER DIODE IN A SOD