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| Part Number | PMEG2020EPASX | PMEG3020EPASX | PMEG2010EPASX |
|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. | NXP Semiconductors |
| Product Status | Active | Active | Active |
| Diode Type | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 20 V | 30 V | 20 V |
| Current - Average Rectified (Io) | 2A | 2A | 1A |
| Voltage - Forward (Vf) (Max) @ If | 420 mV @ 2 A | 470 mV @ 2 A | 375 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns | 4 ns | 50 ns |
| Current - Reverse Leakage @ Vr | 1900 µA @ 20 V | 2500 µA @ 30 V | 335 µA @ 20 V |
| Capacitance @ Vr, F | 175pF @ 1V, 1MHz | 150pF @ 1V, 1MHz | 175pF @ 1V, 1MHz |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 3-UDFN Exposed Pad | 3-UDFN Exposed Pad | 3-UDFN Exposed Pad |
| Supplier Device Package | DFN2020D-3 | DFN2020D-3 | DFN2020D-3 |
| Operating Temperature - Junction | 150°C (Max) | 150°C (Max) | 150°C (Max) |
