PMEG2010BER,115
  • Share:

Nexperia USA Inc. PMEG2010BER,115

Manufacturer No:
PMEG2010BER,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG2010BER,115 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 20V 1A CFP3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 20 V
Capacitance @ Vr, F:185pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.45
1,536

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG2010BER,115 PMEG3010BER,115   PMEG2010BEV,115   PMEG2010ER,115   PMEG2010BEA,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 30 V 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A (DC) 1A 1A (DC)
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A 450 mV @ 1 A 500 mV @ 1 A 340 mV @ 1 A 500 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 50 µA @ 20 V 50 µA @ 30 V 200 µA @ 20 V 1 mA @ 20 V 200 µA @ 20 V
Capacitance @ Vr, F 185pF @ 1V, 1MHz 170pF @ 1V, 1MHz 80pF @ 1V, 1MHz 175pF @ 1V, 1MHz 80pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOT-563, SOT-666 SOD-123W SC-76, SOD-323
Supplier Device Package SOD-123W SOD-123W SOT-666 SOD-123W SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) -65°C ~ 150°C

Related Product By Categories

STPS30SM100ST
STPS30SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 30A TO220AB
STPS10L25G-TR
STPS10L25G-TR
STMicroelectronics
DIODE SCHOTTKY 25V 10A D2PAK
DSI45-12A
DSI45-12A
IXYS
DIODE GEN PURP 1.2KV 45A TO247AD
31GF4-E3/73
31GF4-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO201AD
VS-20TQ035STRR-M3
VS-20TQ035STRR-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 20A TO263AB
ES3DHE3/57T
ES3DHE3/57T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO214AB
IDV05S60CXKSA1
IDV05S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO220-2FP
RGP10A-M3/54
RGP10A-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
SS310L R3G
SS310L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
1N5391GH
1N5391GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A 50V DO-15
RB530SM-30T2R
RB530SM-30T2R
Rohm Semiconductor
DIODE SCHOTTKY 30V 200MA EMD2
RB550VYM-30FHTR
RB550VYM-30FHTR
Rohm Semiconductor
SCHOTTKY BARRIER DIODES

Related Product By Brand

PESD3V3V1BLYL
PESD3V3V1BLYL
Nexperia USA Inc.
TVS DIODE 3.3VWM 10VC 2DFN1006
PESD5V0L5UYF
PESD5V0L5UYF
Nexperia USA Inc.
TVS DIODE 5VWM 12VC SOT363
1N4730A,133
1N4730A,133
Nexperia USA Inc.
DIODE ZENER 3.9V 1W DO41
BZX8450-C2V2-QVL
BZX8450-C2V2-QVL
Nexperia USA Inc.
BZX8450-C2V2-Q/SOT23/TO-236AB
BC849C,235
BC849C,235
Nexperia USA Inc.
TRANS NPN 30V 0.1A TO236AB
74LVT162240ADL,112
74LVT162240ADL,112
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 48SSOP
74AUP1G332GM,115
74AUP1G332GM,115
Nexperia USA Inc.
IC GATE OR 1CH 3-INP 6XSON
XC7SET02GW,125
XC7SET02GW,125
Nexperia USA Inc.
IC GATE NOR 1CH 2-INP 5TSSOP
74HCT1G08GW-Q100,1
74HCT1G08GW-Q100,1
Nexperia USA Inc.
IC GATE AND 1CH 2-INP 5TSSOP
74LVC32APW-Q100J
74LVC32APW-Q100J
Nexperia USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
74HCU04DB,112
74HCU04DB,112
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SSOP
BUK7Y2R0-40H,115
BUK7Y2R0-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR