PMEG2010BER,115
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Nexperia USA Inc. PMEG2010BER,115

Manufacturer No:
PMEG2010BER,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG2010BER,115 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 20V 1A CFP3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 20 V
Capacitance @ Vr, F:185pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:150°C (Max)
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Similar Products

Part Number PMEG2010BER,115 PMEG3010BER,115   PMEG2010BEV,115   PMEG2010ER,115   PMEG2010BEA,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 30 V 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A (DC) 1A 1A (DC)
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A 450 mV @ 1 A 500 mV @ 1 A 340 mV @ 1 A 500 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 50 µA @ 20 V 50 µA @ 30 V 200 µA @ 20 V 1 mA @ 20 V 200 µA @ 20 V
Capacitance @ Vr, F 185pF @ 1V, 1MHz 170pF @ 1V, 1MHz 80pF @ 1V, 1MHz 175pF @ 1V, 1MHz 80pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOT-563, SOT-666 SOD-123W SC-76, SOD-323
Supplier Device Package SOD-123W SOD-123W SOT-666 SOD-123W SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) -65°C ~ 150°C

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